 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| March 2001 (R) AS4C4M4FOQ AS4C4M4F1Q 5V 4M X 4 CMOS QuadCAS DRAM (fastpage mode) Features * Organization: 4,194,304 words x 4 bits * High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time * Low power consumption - Active: 495 mW max - Standby: 5.5 mW max, CMOS I/O * Fast page mode * Refresh - 4096 refresh cycles, 64 ms refresh interval for 4C4M4FOQ - 2048 refresh cycles, 32 ms refresh interval for AS4C4M4F1Q - RAS-only or CAS-before-RAS refresh or self-refresh * TTL-compatible, three-state I/O * 4 separate CAS pins allow for separate I/O operation * JEDEC standard package - 300 mil, 28-pin SOJ - 300 mil, 28-pin TSOP * Latch-up current 200 mA * ESD protection 2000 mV Pin arrangement SOJ VCC I/O0 I/O1 WE RAS *NC/A11 CAS0 CAS1 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 GND I/O3 I/O2 CAS3 OE A9 CAS2 NC A8 A7 A6 A5 A4 GND VCC I/O0 I/O1 WE RAS *NC/A11 CAS0 CAS1 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 Pin designation TSOP 28 27 26 25 24 23 22 21 20 19 18 17 16 15 GND I/O3 I/O2 CAS3 OE A9 CAS2 NC A8 A7 A6 A5 A4 GND Pin(s) A0 to A11 RAS CAS0 to CAS3 WE I/O0 to I/O3 OE VCC GND Description Address inputs Row address strobe Column address strobe Write enable Input/output Output enable Power Ground AS4C4M4F0Q/F1Q 11 12 13 14 * NC on 2K refresh version; A11 on 4K refresh version Selection guide Symbol Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) access time Minimum read or write cycle time Minimum fast page mode cycle time Maximum operating current Maximum CMOS standby current 4/11/01; v.1.0 AS4C4M4F0Q/1Q 4C4M4FOQ-50 AS4C4M4F1Q-50 50 25 12 13 85 20 90 1.0 4C4M4FOQ-60 AS4C4M4F1Q-60 60 30 15 15 100 24 80 1.0 Unit ns ns ns ns ns ns mA mA P. 1 of 16 tRAC tCAA tCAC tOEA tRC tPC ICC1 ICC5 Alliance Semiconductor Copyright (c) Alliance Semiconductor. All rights reserved. AS4C4M4FOQ AS4C4M4F1Q (R) Functional description The 4C4M4FOQ and AS4C4M4F1Q are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words x 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in PC, workstation, router and switch applications. These devices feature a high speed page mode operation where read and write operations within a single row (or page) can be executed at very high speed by toggling column addresses within that row. Row and column addresses are alternately latched into input buffers using the falling edge of RAS and CAS inputs respectively. Four individual CAS pins allow for separate I/O operation which enables the devices to operate in parity mode. Also, RAS is used to make the column address latch transparent, enabling application of column addresses prior to CAS assertion. Refresh on the 4096 address combinations of A0 to A11 must be performed every 64 ms using: * RAS-only refresh: RAS is asserted while CAS is held high. Each of the 4096 rows must be strobed. Outputs remain high impedence. * Hidden refresh: CAS is held low while RAS is toggled. Refresh address is generated internally. Outputs remain low impedence with previous valid data. * CAS-before-RAS refresh (CBR): CAS is asserted prior to RAS. Refresh address is generated internally. Outputs are high-impedence (OE and WE are don't care). * Normal read or write cycles refresh the row being accessed. * Self-refresh cycles Refresh on the 2048 address combinations of A0 to A10 must be performed every 32 ms using: * RAS-only refresh: RAS is asserted while CAS is held high. Each of the 2048 rows must be strobed. Outputs remain high impedence. * Hidden refresh: CAS is held low while RAS is toggled. Refresh address is generated internally. Outputs remain low impedence with previous valid data. * CAS-before-RAS refresh (CBR): CAS is asserted prior to RAS. Refresh address is generated internally. Outputs are high-impedence (OE and WE are don't care). * Normal read or write cycles refresh the row being accessed. * Self-refresh cycles The 4C4M4FOQ and AS4C4M4F1Q are available in the standard 28-pin plastic SOJ and 28-pin plastic TSOP packages. The 4C4M4FOQ and AS4C4M4F1Q operate with a single power supply of 5V 0.5V and provide TTL compatible inputs and outputs. Logic block diagram for 4K refresh VCC GND Refresh controller Column decoder Sense amp Data I/O buffers I/O0 to I/O3 RAS RAS clock generator CAS CAS clock generator WE WE clock generator A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 OE Address buffers Row decoder 4,194,304 x 4 Array (16,777,216) 4/11/01; v.1.0 Alliance Semiconductor P. 2 of 16 AS4C4M4FOQ AS4C4M4F1Q (R) Logic block diagram for 2K refresh VCC GND Refresh controller Column decoder Sense amp Data I/O buffers I/O0 to I/O3 RAS RAS clock generator CAS CAS clock generator WE WE clock generator A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 OE Address buffers Row decoder 4,194,304 x 4 Array (16,777,216) Substrate bias generator Recommended operating conditions Parameter Supply voltage Input voltage Ambient operating temperature Symbol VCC GND VIH VIL TA Min 4.5 0.0 2.4 -0.5 0 Nominal 5.0 0.0 - - Max 5.5 0.0 VCC 0.8 70 Unit V V V V C VIL min -3.0V for pulse widths less than 5 ns. Recommended operating conditions apply throughout this document unlesss otherwise specified. 4/11/01; v.1.0 Alliance Semiconductor P. 3 of 16 AS4C4M4FOQ AS4C4M4F1Q (R) Absolute maximum ratings Parameter Input voltage Input voltage (DQs) Power supply voltage Storage temperature (plastic) Soldering temperature x time Power dissipation Short circuit output current Symbol Vin VDQ VCC TSTG TSOLDER PD Iout Min -1.0 -1.0 -1.0 -55 - - - Max +7.0 VCC + 0.5 +7.0 +150 260 x 10 1 50 Unit V V V C o C x sec W mA DC electrical characteristics -50 Parameter Symbol Test conditions 0V Vin +5.5V, Pins not under test = 0V DOUT disabled, 0V Vout +5.5V RAS, CAS Address cycling; tRC=min RAS = CAS VIH RAS cycling, CAS VIH, tRC = min of RAS low after XCAS low. RAS = VIL, CAS, address cycling: tHPC = min RAS = CAS = VCC - 0.2V IOUT = -5.0 mA IOUT = 4.2 mA RAS, CAS cycling, tRC = min RAS = UCAS = LCAS 0.2V, WE = OE VCC - 0.2V, all other inputs at 0.2V or VCC - 0.2V Min -5 -5 - - Max +5 +5 110 2.0 Min -5 -5 - - -60 Max +5 +5 100 2.0 Unit A A mA mA 1,2 Notes Input leakage current IIL Output leakage current Operating power supply current TTL standby power supply current IOL ICC1 ICC2 Average power supply current, RAS refresh ICC3 mode or CBR Fast page mode average power supply ICC4 current CMOS standby power ICC5 supply current Output voltage CAS before RAS refresh current VOH VOL ICC6 - 110 - 100 mA 1 - 90 - 80 mA 1, 2 - 2.4 - - 1.0 - 0.4 110 - 2.4 - - 1.0 - 0.4 100 mA V V mA Self refresh current ICC7 - 0.6 - 0.6 mA 4/11/01; v.1.0 Alliance Semiconductor P. 4 of 16 AS4C4M4FOQ AS4C4M4F1Q (R) AC parameters common to all waveforms -50 Symbol Parameter tRC tRP tRAS tCAS tRCD tRAD tRSH tCSH tCRP tASR tRAH tT tREF tCP tRAL tASC tCAH Random read or write cycle time RAS precharge time RAS pulse width CAS pulse width RAS to CAS delay time RAS to column address delay time CAS to RAS hold time RAS to CAS hold time CAS to RAS precharge time Row address setup time Row address hold time Transition time (rise and fall) Refresh period CAS precharge time Column address to RAS lead time Column address setup time Column address hold time Min 80 30 50 8 15 12 10 40 5 0 8 1 - 8 25 0 8 Max - - 10K 10K 35 25 - - - - - 50 32/64 - - - Min 100 40 60 10 15 12 10 50 5 0 10 1 - 10 30 0 10 -60 Max - - 10K 10K 43 30 - - - - - 50 32/64 - - - - Unit ns ns ns ns ns ns ns ns ns ns ns ns ms ns ns ns ns 4,5 17/16 6 7 Notes Read cycle -50 Symbol Parameter tRAC tCAC tAA tRCS tRCH tRRH Access time from RAS Access time from CAS Access time from address Read command setup time Read command hold time to CAS Read command hold time to RAS Min - - - 0 0 0 Max 50 12 25 - - - Min - - - 0 0 0 -60 Max 60 15 30 - - - Unit ns ns ns ns ns ns 9 9 Notes 6 6,13 7,13 4/11/01; v.1.0 Alliance Semiconductor P. 5 of 16 AS4C4M4FOQ AS4C4M4F1Q (R) Write cycle -50 Symbol Parameter tWCS tWCH tWP tRWL tCWL tDS tDH Write command setup time Write command hold time Write command pulse width Write command to RAS lead time Write command to CAS lead time Data-in setup time Data-in hold time Min 0 10 10 10 8 0 8 Max - - - - - - - Min 0 10 10 10 10 0 10 -60 Max - - - - - - - Unit ns ns ns ns ns ns ns 12 12 Notes 11 11 Read-modify-write cycle -50 Symbol Parameter tRWC tRWD tCWD tAWD Read-write cycle time RAS to WE delay time CAS to WE delay time Column address to WE delay time Min 113 67 32 42 Max - - - - Min 135 77 35 47 -60 Max - - - - Unit ns ns ns ns 11 11 11 Notes Refresh cycle -50 Symbol Parameter tCSR tCHR tRPC tCPT CAS setup time (CAS-before-RAS) CAS hold time (CAS-before-RAS) RAS precharge to CAS hold time CAS precharge time (CBR counter test) Min 5 8 0 10 Max - - - Min 5 10 0 10 -60 Max - - - - Unit ns ns ns ns Notes 3 3 4/11/01; v.1.0 Alliance Semiconductor P. 6 of 16 AS4C4M4FOQ AS4C4M4F1Q (R) Fast page mode cycle -50 Symbol tCPA tRASP tPC tCP tPCM tCRW Parameter Access time from CAS precharge RAS pulse width -60 Max 28 100K - - - - Min - 60 35 10 85 15 Max 35 100K - - - - Unit Notes 13 Min - 50 30 10 80 12 Read-write cycle time CAS precharge time (fast page) Fast page mode RMW cycle Page mode CAS pulse width (RMW) Output enable -50 Symbol tCLZ tROH tOEA tOED tOEZ tOEH tOLZ tOFF Parameter CAS to output in Low Z RAS hold time referenced to OE OE access time OE to data delay Output buffer turnoff delay from OE OE command hold time OE to output in Low Z Output buffer turn-off time Min 0 8 - 13 0 10 0 0 Max - - 13 - 13 - - 13 Min 0 10 - 15 0 10 0 0 -60 Max - - 15 - 15 - - 15 Unit ns ns ns ns ns ns ns ns 8,10 8 Notes 8 Self refresh cycle Std Symbol tRASS tRPS tCHS -50 Parameter RAS pulse width (CBR self refresh) RAS precharge time (CBR self refresh) CAS hold time (CBR self refresh) -60 Max - - - Min 100 105 10 Max - - - Unit s ns ns Notes Min 100 90 8 4/11/01; v.1.0 Alliance Semiconductor P. 7 of 16 AS4C4M4FOQ AS4C4M4F1Q (R) Notes 1 2 3 ICC1, ICC3, ICC4, and ICC6 are dependent on frequency. ICC1 and ICC4 depend on output loading. Specified values are obtained with the output open. An initial pause of 200 s is required after power-up followed by any 8 RAS cycles before proper device operation is achieved. In the case of an internal refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 8 initialization cycles are required after extended periods of bias without clocks (greater than 8 ms). AC Characteristics assume tT = 2 ns. All AC parameters are measured with a load equivalent to two TTL loads and 100 pF, VIL (min) GND and VIH (max) VCC. VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between VIH and VIL. Operation within the tRCD (max) limit insures that tRAC (max) can be met. tRCD (max) is specified as a reference point only. If tRCD is greater than the specified tRCD (max) limit, then access time is controlled exclusively by tCAC. Operation within the tRAD (max) limit insures that tRAC (max) can be met. tRAD (max) is specified as a reference point only. If tRAD is greater than the specified tRAD (max) limit, then access time is controlled exclusively by tAA. Assumes three state test load (5 pF and a 380 Thevenin equivalent). Either tRCH or tRRH must be satisfied for a read cycle. tOFF (max) defines the time at which the output achieves the open circuit condition; it is not referenced to output voltage levels. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last. tWCS, tWCH, tRWD, tCWD and tAWD are not restrictive operating parameters. They are included in the datasheet as electrical characteristics only. If tWS tWS (min) and tWH tWH (min), the cycle is an early write cycle and data out pins will remain open circuit, high impedance, throughout the cycle. If tRWD tRWD (min), tCWD tCWD (min) and tAWD tAWD (min), the cycle is a read-write cycle and the data out will contain data read from the selected cell. If neither of the above conditions is satisfied, the condition of the data out at access time is indeterminate. These parameters are referenced to CAS leading edge in early write cycles and to WE leading edge in read-write cycles. Access time is determined by the longest of tCAA or tCAC or tCPA tASC tCP to achieve tPC (min) and tCPA (max) values. These parameters are sampled and not 100% tested. These characteristics apply to 4C4M4FOQ 5V devices. These characteristics apply to AS4C4M4F1Q 5V devices. 4 5 6 7 8 9 10 11 12 13 14 15 16 17 AC test conditions - Access times are measured with output reference levels of VOH = 2.4V and VOL = 0.4V, VIH = 2.4V and VIL = 0.8V - Input rise and fall times: 2 ns +5V R1 = 828 Dout 100 pF* R2 = 295 *including scope and jig capacitance +3.3V R1 = 828 Dout 50 pF* R2 = 295 *including scope and jig capacitance GND Figure A: Equivalent output load (AS4C4M4F0/AS4C4M4F1) GND Figure B: Equivalent output load (AS4C4M4F0/AS4C4M4F1) Key to switching waveforms Rising input Falling input Undefined output/don't care 4/11/01; v.1.0 Alliance Semiconductor P. 8 of 16 AS4C4M4FOQ AS4C4M4F1Q (R) Read waveform tRC tRAS tRCD tRSH tRP RAS tCSH tCRP tASC tRCS tCAH tCAS CAS tRAD tASR tRAH Column address tRRH tRCH tRAL Address Row address WE tROH tROH tWEZ OE tRAC tAA tOEA tCAC tCLZ tREZ Data out tOLZ tOEZ tOFF (see note 11) DQ Early write waveform tRC tRAS tRP RAS tCSH tRSH tCRP tRCD tRAD tASC tASR tRAH tCAH Column address tCWL tRWL tWP tWCS tWCH tCAS tRAL CAS Address Row address WE OE tDS tDH Data in DQ 4/11/01; v.1.0 Alliance Semiconductor P. 9 of 16 AS4C4M4FOQ AS4C4M4F1Q (R) Write waveform tRC tRAS tRP OE controlled RAS tCSH tCRP tRCD tRSH tCAS tRAL tRAD tRAH tASC tCAH Column address tRWL tCWL tWP CAS tASR Address Row address WE tOEH OE tOED tDS tDH DQ Data in Read-modify-write waveform tRWC tRAS tRP tCAS tCRP tRCD tCSH tRSH RAS CAS tRAD tASR tRAH Row address tAR tRAL tASC tCAH Column address tRWD tAWD tRCS tCWD tOEA tOEZ tOED tCWL tWP tRWL Address WE OE tRAC tAA tCAC tCLZ tDS tDH Data in DQ tOLZ Data out 4/11/01; v.1.0 Alliance Semiconductor P. 10 of 16 AS4C4M4FOQ AS4C4M4F1Q (R) Fast page mode read waveform tRASP tRP RAS tCSH tCRP tRCD tCAS tCP tPC tRSH CAS tAR tRAD tASR tRAH tASC tRAL tCAH Address WE Row Column tRCS tRCH tOEA Column tRCS Column tRCH tOEA tRRH OE tRAC tCLZ tAA tOEZ tCAP tOFF tCAC I/O Data out Data out Data out Fast page mode byte write waveform tRASP tRP RAS tPCM tCSH tRCD tCAS tCP tCRP CAS tASR tRAD tRAH tCAH tCAH tRAL tCAH Address Row tRCS Column tRWD tCWD tAWD Column tCWL tCWD Column tRWL tCWD tAWD tCWL tWP WE tOEA tOEZ tAA tRAC tCLZ tCAC tDS tDH tDS tCLZ tCAC tCAP tCLZ tCAC tOED tOEA OE I/O Data in Data out Data in Data out Data in Data out 4/11/01; v.1.0 Alliance Semiconductor P. 11 of 16 AS4C4M4FOQ AS4C4M4F1Q (R) Fast page mode early write waveform tRASP tRAH tRWL tRCD tCSH tCAS tASC tWCS tCP tRAL tRSH tPC tCAH RAS tCRP CAS tAR tASR tRAD Address Row Column Column Column tCWL tWP tWCH tOEH WE OE tHDR tDS tDH tOED I/O Data In Data in Data in CAS before RAS refresh waveform tRC tRP tRAS WE = VIH RAS tRPC tCP tCSR tCHR CAS DQ OPEN RAS only refresh waveform tRC tRAS tRP tRPC WE = OE = VIH or VIL RAS tCRP CAS tASR tRAH Row address Address 4/11/01; v.1.0 Alliance Semiconductor P. 12 of 16 AS4C4M4FOQ AS4C4M4F1Q (R) Hidden refresh waveform (read) tRC tRAS tRP tCHR tRCD tRSH tCRP tRAS tRC tRP RAS tCRP CAS tRAD tRAH tASR tASC Row tRCS Col address tRRH tOEA tAR tCAH Address WE OE tRAC tAA tCAC tCLZ tOEZ Data out tOFF DQ Hidden refresh waveform (write) tRC tRAS tRP tCHR RAS tCRP tRCD tRSH CAS tAR tRAD tRAH tASR tASC Row address tWCR tWP tWCS tWCH Col address tRWL tRAL tCAH Address WE tDS tDHR tDH Data in DQ OE 4/11/01; v.1.0 Alliance Semiconductor P. 13 of 16 AS4C4M4FOQ AS4C4M4F1Q (R) CAS before RAS refresh counter test waveform tRAS tRSH tRP RAS tCSR tCHR tCPT tCAS CAS tASC tCAH tRAL Address Col address tAA tCAC tCLZ tOFF tOEZ Data out tRCS tRRH tRCH DQ Read cycle WE tROH tOEA OE tRWL tCWL tWP tWCH tWCS Write cycle WE tDH tDS DQ OE Data in tRCS tCWD tAWD tRWL tWP tCWL WE Read-Write cycle tOEA tOED OE t AA tCLZ tCAC tOEZ tDS Data out Data in tDH DQ 4/11/01; v.1.0 Alliance Semiconductor P. 14 of 16 AS4C4M4FOQ AS4C4M4F1Q (R) CAS-before-RAS self refresh cycle tRP tRASS tRPS RAS tRPC tCP tCSR tCHS tRPC UCAS, LCAS tCEZ DQ Capacitance 15 Parameter Input capacitance DQ capacitance Symbol CIN1 CIN2 CDQ Signals A0 to A9 RAS, UCAS, LCAS, WE, OE DQ0 to DQ15 = 1 MHz, Ta = Room temperature Test conditions Vin = 0V Vin = 0V Vin = Vout = 0V Max 5 7 7 Unit pF pF pF 4C4M4FOQ ordering information Package \ RAS access time Plastic SOJ, 300 mil, 24/26-pin Plastic TSOP, 300 mil, 24/26-pin 5V 3.3V 50 ns 4C4M4FOQ-50JC 4C4M4FOQ-50TC 60 ns 4C4M4FOQ-60JC 4C4M4FOQ-60TC AS4C4M4F1Q ordering information Package \ RAS access time Plastic SOJ, 300 mil, 24/26-pin Plastic TSOP, 300 mil, 24/26-pin 5V 3.3V 50 ns AS4C4M4F1Q-50JC AS4C4M4F1Q-50TC 60 ns AS4C4M4F1Q-60JC AS4C4M4F1Q-60TC 4C4M4FOQ family part numbering system AS4 DRAM prefix C 4M4 E0 E0=4K refresh E1=2K refresh -XX RAS access time X C C = 5V CMOS 4Mx4 LC = 3.3V CMOS Package: Commercial temperature J = SOJ 300 mil, 24/26 range, 0C to 70 C T = TSOP 300 mil, 24/26 4/11/01; v.1.0 Alliance Semiconductor P. 15 of 16 (c) Copyright Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document. The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The information in this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of the application or use of any product described herein, and disclaims any express or implied warranties related to the sale and/or use of Alliance products including liability or warranties related to fitness for a particular purpose, merchantability, or infringement of any intellectual property rights, except as express agreed to in Alliance's Terms and Conditions of Sale (which are available from Alliance). All sales of Alliance products are made exclusively according to Alliance's Terms and Conditions of Sale. The purchase of products from Alliance does not convey a license under any patent rights, copyrights, mask works rights, trademarks, or any other intellectual property rights of Alliance or third parties. Alliance does not authorize its products for use as critical components in life-supporting systems where a malfunction or failure may reasonably be expected to result in significant injury to the user, and the inclusion of Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use. AS4C4M4FOQ AS4C4M4F1Q (R) 4/11/01; v.1.0 Alliance Semiconductor P. 16 of 16 |
Price & Availability of AS4C4M4F1Q-50JC
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |